| PART |
Description |
Maker |
| 2SA1357 E000517 |
TRANSISTOR (STROBE FLASH/ AUDIO POWER AMPLIFIER APPLICATIONS)
TRANSISTOR (STROBE FLASH, AUDIO POWER AMPLIFIER APPLICATIONS)
STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIERAPPLICATIONS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3072 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA116009 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC4681 |
Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
| 2SA1431-Y |
5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1357 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SC3279 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
| 2SC3671 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SA1430 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SA1431 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| GT5G10306 |
STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
